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| TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T TOSHIBA LED Lamp TLRE17T,TLRME17T,TLSE17T TLOE17T,TLYE17T Panel Circuit Indicator Unit in mm * * * * * * * 5mm package InGaAP technology All plastic mold type Transparent lens High intensity light emission Excellent low current light output Applications: Outdoor message signboards, safety equipment Line-Up Product Name TLRE17T TLRME17T TLSE17T TLOE17T TLYE17T Color Red Red Red Orange Yellow Material InGaAP InGaAP InGaAP InGaAP InGaAP JEDEC EIAJ TOSHIBA Weight: 0.31 g (typ.) Maximum Ratings (Ta = 25C) Product Name TLRE17T TLRME17T TLSE17T TLOE17T TLYE17T Forward Current IF (mA) 50 50 50 50 50 Reverse Voltage VR (V) 4 4 4 4 4 Power Dissipation PD (mW) 120 120 120 120 120 -40~100 -40~120 Operating Temperature Topr (C) Storage Temperature Tstg (C) 1 2002-09-25 TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T Electrical And Optical Characteristics (Ta = 25C) Product Name d TLRE17T TLRME17T TLSE17T TLOE17T TLYE17T Unit 630 626 613 605 587 Typ. Emission Wavelength p (644) (636) (623) (612) (590) nm 20 23 20 20 17 IF 20 20 20 20 20 mA Min 476 850 850 1530 850 mcd Luminous Intensity IV Typ. 1500 2400 3000 4500 3000 Forward Voltage VF Max 2.4 2.4 2.4 2.4 2.4 V Reverse Current IR Max VR 50 50 50 50 50 A 4 4 4 4 4 V IF 20 20 20 20 20 mA Typ. 1.9 1.9 1.9 2.0 2.0 IF 20 20 20 20 20 mA Precautions Please be careful of the following: * * * Soldering temperature: 260C max, soldering time: 3s max (Soldering portion of lead: Below the lead stopper) If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. This visible LED lamp also emits some IR light. If a photodetector is located near the lED lamp, please ensure that it will not be affected by this IR light. 2 2002-09-25 TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T TLRE17T IF - VF 100 50 30 Ta=25 10000 Ta=25 IV - IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV - Tc 3 1.0 Relative Luminous Intensity - Wavelength IF = 20mA Ta= 25 Relative luminous intensity IV Relative luminous intensity -20 0.8 1 0.6 0.5 0.4 0.3 0.2 0.1 0 20 40 60 80 0 580 600 620 640 660 680 700 Case temperature Tc () Wavelength (nm) Radiation Pattern Ta = 25 Allowable forward current IF (mA) 80 IF - Ta 60 20 30 40 50 60 70 80 90 10 0 10 20 30 40 50 60 70 80 40 20 0 0.2 0.4 0.6 0.8 90 1.0 0 0 20 40 60 80 100 120 Ambient temperature Ta () 3 2002-09-25 TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T TLRME17T IF - VF 100 50 30 Ta=25 10000 Ta=25 IV - IF IF (mA) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 (mcd) 1000 100 30 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV - Tc 10 1.0 Relative Luminous Intensity - Wavelength IF = 20mA Ta= 25 5 3 RELATIVE LUMINOUS INTENSITY -20 Relative luminous intensity IV 0.8 0.6 1 0.4 0.5 0.3 0.2 0.1 0 20 40 60 80 0 580 600 620 640 660 680 700 Case temperature Tc () Wavelength (nm) Radiation Pattern Ta = 25 Allowable forward current IF (mA) 80 IF - Ta 60 20 30 40 50 60 70 80 90 10 0 10 20 30 40 50 60 70 80 40 20 0 0.2 0.4 0.6 0.8 90 1.0 0 0 20 40 60 80 100 120 Ambient temperature Ta () 4 2002-09-25 TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T TLSE17T IF - VF 100 50 30 Ta=25 10000 Ta=25 IV - IF IF (mA) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 (mcd) 1000 100 30 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV - Tc 3 1.0 Ta= 25 Relative Luminous Intensity - Wavelength IF = 20mA Relative luminous intensity IV Relative luminous intensity -20 60 80 0.8 1 0.6 0.5 0.4 0.3 0.2 0.1 0 20 40 0 560 580 600 620 640 660 680 Case temperature Tc () Wavelength (nm) Radiation Pattern Ta = 25 Allowable forward current IF (mA) 80 IF - Ta 60 20 30 40 50 60 70 80 90 10 0 10 20 30 40 50 60 70 80 40 20 0 0.2 0.4 0.6 0.8 90 1.0 0 0 20 40 60 80 100 120 Ambient temperature Ta () 5 2002-09-25 TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T TLOE17T IF - VF 100 50 30 Ta=25 10000 Ta=25 IV - IF IF (mA) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 (mcd) 1000 100 30 Forward current 10 5 3 1 1.6 1 10 100 Forward voltage VF (V) Forward current IF (mA) IV - Tc 3 1.0 Ta= 25 Relative Luminous Intensity - Wavelength IF = 20mA Relative luminous intensity IV Relative luminous intensity -20 60 80 0.8 1 0.6 0.5 0.4 0.3 0.2 0.1 0 20 40 0 540 560 580 600 620 640 660 Case temperature Tc () Wavelength (nm) Radiation Pattern Ta = 25 Allowable forward current IF (mA) 80 IF - Ta 60 20 30 40 50 60 70 80 90 10 0 10 20 30 40 50 60 70 80 40 20 0 0.2 0.4 0.6 0.8 90 1.0 0 0 20 40 60 80 100 120 Ambient temperature Ta () 6 2002-09-25 TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T TLYE17T IF - VF 100 50 30 Ta=25 10000 Ta=25 IV - IF IF (mA) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 (mcd) 1000 100 10 Forward current 10 5 3 1 1.6 1 10 100 Forward voltage VF (V) Forward current IF (mA) IV - Tc 3 1.0 Relative Luminous Intensity - Wavelength IF = 20mA Ta= 25 Relative luminous intensity IV Relative luminous intensity 0.8 1 0.6 0.5 0.4 0.3 0.2 0.1 -20 0 20 40 60 80 0 540 540 580 600 620 640 660 Case temperature Tc () Wavelength (nm) Radiation Pattern Ta = 25 Allowable forward current IF (mA) 80 IF - Ta 60 20 30 40 50 60 70 80 90 10 0 10 20 30 40 50 60 70 80 40 20 0 0.2 0.4 0.6 0.8 90 1.0 0 0 20 40 60 80 100 120 Ambient temperature Ta () 7 2002-09-25 TLRE17T,TLRME17T,TLSE17T,TLOE17T,TLYE17T RESTRICTIONS ON PRODUCT USE 000707EAC * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 8 2002-09-25 |
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